LX5501A p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 1 copyright ? 2004 rev. 1.1, 2005-07-14 www. microsemi . com ingap hbt gain block tm ? description this general-purpose amplifier is a low cost, broadband rfic manu- factured with an ingap/gaas hetero- junction bipolar transistor (hbt) process (mocvd). designed as an easily cascadable 50- ohm internally matched gain block, the LX5501A can be used for if and rf amplification in wireless / wired voice and data communication products as well as in broadband test equipment operating up to 6 ghz. the amplifier is available in a plastic 5-lead sot-23 package. important: for the most current data, consult microsemi ?s website: http://www.microsemi.com key features ? advanced ingap hbt ? dc to 6 ghz operation ? single supply ? low idle current (10 - 35 ma) ? small signal gain ~ 11 db at 6 ghz ? p1db ~ 11 dbm at 6 ghz ? sot-23 package applications ? pa driver for wlan and cordless phones. ? vco buffer. ? low current, high gain cascaded amplifiers. product highlight ? fully characterized for 5v operation (with external bias resistor). ? input and output matched to 50 ohms for ease of cascading. ? cascaded gain blocks can be individually biased for the lowest supply current. c1 c2 l1 c3 c4 vcc out in LX5501A 35 1 2 4 rext package order info se plastic sot-23 5 pin t a (c) rohs compliant / pb-free transition dc: 0503 -40 to +85 c LX5501Ase note: available in tape & reel. append the letters ?tr? to the part number. (i.e. LX5501Ase-tr) l l x x 5 5 5 5 0 0 1 1 a a
LX5501A p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 2 copyright ? 2004 rev. 1.1, 2005-07-14 www. microsemi . com ingap hbt gain block tm ? absolute maximum ratings dc supply voltage ............................................................................................6v collector current ........................................................................................100ma rf input power........................................................................................... 10dbm operating temperature range ...........................................................-40 to +85 c storage temperature range...........................................................-65 c to 150 c peak package solder reflow temp. (40 second max. exposure) ... 260c (+0, -5) note: exceeding these ratings could cause damage to the device. all voltages are with respect to ground. currents are positive into, negative out of specified terminal . package pin out rf output / vcc gnd gnd rf input gnd 1 2 34 5 se p ackage (top view) rohs / pb-free 100% matte tin lead finish functional pin description pin no. description 1 ground 2 ground 3 rf input 4 ground 5 rf output/vcc supply recommended operating conditions LX5501A parameter symbol min typ max units ` supply voltage (with appropriate external resistor) vcc 3.5 6 v quiescent current (no rf input) icq 10 40 ma electrical characteristics conditions: +25 c, 5v supply voltage. LX5501A parameter symbol test conditions min typ max units ` general specifications (fig 1. test circuit) small signal gain s21 frequency = 5.8 ghz 11.4 db p1db compression p1db frequency = 5.8 ghz 11.5 dbm input return loss s11 frequency = 2.4-6 ghz -10 db output return loss s22 frequency = 2.4-6 ghz -10 db isolation s12 frequency = 2.4-6 ghz -20 db harmonics frequency = 5.8 ghz, pout = 10 dbm -30 dbc quiescent current icq 30 ma e e l l e e c c t t r r i i c c a a l l s s
LX5501A p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 3 copyright ? 2004 rev. 1.1, 2005-07-14 www. microsemi . com ingap hbt gain block tm ? figure 1: test circuit for 1 to 6 ghz c1 c2 l1 c3 c4 vcc out in LX5501A 35 1 2 4 rext component value comment c1,c2 10pf dc block (0402) c3 10pf rf decoupling (0402) c4 0.1uf lf decoupling (0402) l1 3.3nh rf choke (0402) r ext 50 ohms bias setting resistor (0402) a a p p p p l l i i c c a a t t i i o o n n
LX5501A p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 4 copyright ? 2004 rev. 1.1, 2005-07-14 www. microsemi . com ingap hbt gain block tm ? application note d esign c onsiderations the gain block is self-biased by the voltage that is present on pin 5 (v bias ). chart 1 shows the quiescent current vs. bias voltage characteristic. chart 2 shows device characteristics when operated with a 5v supply and with different values of external resistor. using chart 2 it is possible to trade-off gain and p1db compression point for supply current. supply voltages other than 5v may be accommodated by adjusting the value of the external resistor to produce the same quiescent current as the 5v case. to calculate the resistor required for a diff erent supply voltage use the following formula: ext ext bias bias r (v1)=r (5v)? (v1-v ) (5-v ) where v bias is the pin 5 bias voltage obtained from chart 1and v1 is the desired supply voltage. typcal quiescent current vs. pin 5 bias voltage @ 25 c typcal p1db, gain and ic vs. r ext @ 25 c 0 10 20 30 40 50 60 70 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 pin 5 bias voltage - volts icq, quiescent current - ma ic q 0 2 4 6 8 10 12 14 25 75 125 175 rext - ohms gain, p1db - db/dbm 0 5 10 15 20 25 30 35 ic, supply current - ma gain ic p1db frequency = 5.8ghz, v cc = 5v typcal s-parametrs @ 25 c typcal 2.4 ghz characteristics @ 25 c s21 s11 s12 s22 0 2 4 6 8 10 12 14 16 18 23456 frequency - ghz s21 - db -30 -25 -20 -15 -10 -5 0 s11, s12, s22 - db v cc = 5v, r ext = 50 ? p1db = 12.0 dbm -10 -5 0 5 10 15 20 -25 -20 -15 -10 -5 0 5 pin - dbm pout, gain - dbm/db 0 5 10 15 20 25 30 35 40 45 50 ic, supply current - ma p1db pout gain ic v cc = 5v, r ext = 50 ? a a p p p p l l i i c c a a t t i i o o n n s s
LX5501A p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 5 copyright ? 2004 rev. 1.1, 2005-07-14 www. microsemi . com ingap hbt gain block tm ? typcal 5.8 ghz characteristics @ 25 c typical supply current variation over ?40 to +85 c ambient p1db = 11.5 dbm -15 -10 -5 0 5 10 15 -25 -20 -15 -10 -5 0 5 pin - dbm pout, gain - dbm/db 0 5 10 15 20 25 30 35 40 45 50 ic, supply current - ma p1db pout gain ic v cc = 5v, r ext = 50 ? 0 5 10 15 20 25 30 35 40 45 -20 -15 -10 -5 0 5 10 15 pin - dbm supply current - ma -40 deg c +25 deg c +85 deg c frequency = 5.8ghz, v cc = 5v. r ext = 50 ? typcal gain variation over ?40 to +85 c ambient typcal p1db variation over ?40 to +85 c ambient 0 2 4 6 8 10 12 14 -20 -15 -10 -5 0 5 10 15 pin - dbm gain - db -40 deg c +25 deg c +85 deg c frequency = 5.8ghz, v cc = 5v, r ext = 50 ? 0 2 4 6 8 10 12 -50 0 50 100 ambient temperature - deg c p1db - dbm p1db frequency = 5.8ghz, v cc = 5v, r ext = 50 ? c c h h a a r r t t s s
LX5501A p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 6 copyright ? 2004 rev. 1.1, 2005-07-14 www. microsemi . com ingap hbt gain block tm ? package dimensions se 5 pin plastic sot-23 h g f e a1 j i c k a b d note: 1. dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006?) on any side. lead dimension shall not include solder coverage. m illimeters i nches dim min max min max a 0.90 1.30 0.035 0.051 a1 0.90 1.45 0.035 0.057 b 0.25 0.50 0.010 0.020 c 0.09 0.20 0.004 0.008 d 2.80 3.10 0.110 0.122 e 1.50 1.75 0.059 0.069 f 0.95 bsc 0.038 bsc g 1.90 bsc 0.075 bsc h 2.60 3.00 0.102 0.118 i 0.35 0.55 0.014 0.022 j 0.00 0.15 0.000 0.006 k 10 max 10 max m m e e c c h h a a n n i i c c a a l l s s
LX5501A p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 7 copyright ? 2004 rev. 1.1, 2005-07-14 www. microsemi . com ingap hbt gain block tm ? notes production data ? information contained in this document is proprietary to microsemi and is current as of publication date. this document may not be modified in any way without the express written consent of microsemi. product processing does not necessarily include testing of all parameters. microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. n n o o t t e e s s
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